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dc.contributor.authorAzzi, S.
dc.contributor.authorBelkharroubi, F.
dc.contributor.authorRamdani, N.
dc.contributor.authorAmeri, M.
dc.contributor.authorMessaoudi, I.S.
dc.contributor.authorBelkilali, W.
dc.contributor.authorDrici, L.
dc.contributor.authorBlaha, L.
dc.contributor.authorAmeri, I.
dc.contributor.authorAl-Douri, Y.
dc.contributor.authorBouhemadou, A.
dc.date.accessioned2023-11-28T13:26:44Z
dc.date.available2023-11-28T13:26:44Z
dc.date.issued2023en_US
dc.identifier.citationAzzi, S., Belkharroubi, F., Ramdani, N., Messaoud, I. S., Belkilali, W., Drici, L., ... & Bouhemadou, A. (2023). Investigation of optoelectronic properties of half-Heusler KZnN and KZnP compounds. Revista Mexicana de Física, 69(6 Nov-Dec), 060501-1.en_US
dc.identifier.issn0035-001X
dc.identifier.urihttps://hdl.handle.net/20.500.12960/1563
dc.description.abstractThis is to investigate the structural, mechanical, electronic and optical properties of half-Heusler KZnN and KZnP compounds. The ab initio method based on density functional theory is employed. The study of structural properties has allowed us to verify the cubic structure type I that is the most stable among the three possible atomic arrangements for the two half-Heusler compounds. The mechanical stability is checked, since the calculated elastic constants obey the stability criteria of cubic. Our calculations have demonstrated that KZnN is a ductile material that is considerably stiffer than KZnP, which exhibits brittleness. The obtained results for the electronic properties with mBJ-GGA approximation reveal a semiconductor behavior with a band gap along Γ as estimated at 0.3 eV and 0.9 eV for KZnN and KZnP compounds, respectively. In addition, the optical properties have been studied by analyzing the variation of different parameters such as dielectric function, refractive index, reflectivity, absorption coefficient and conductance as a function of photon’s energy for a wide range; 0 - 40 eV. The origin of peaks in the optical spectra is determined in terms of calculated energy band structures. This work has predicted strong absorption in the ultraviolet field.en_US
dc.language.isoengen_US
dc.publisherSociedad Mexicana de Fisicaen_US
dc.relation.ispartofRevista Mexicana de Fisicaen_US
dc.relation.isversionof10.31349/RevMexFis.69.060501en_US
dc.rightsinfo:eu-repo/semantics/openAccessen_US
dc.subjectHalf-Heusleren_US
dc.subjectKZnNen_US
dc.subjectKZnPen_US
dc.subjectMechanicalen_US
dc.subjectOpticalen_US
dc.titleInvestigation of optoelectronic properties of half-Heusler KZnN and KZnP compoundsen_US
dc.typearticleen_US
dc.departmentMühendislik Fakültesi, Makine Mühendisliği Bölümüen_US
dc.contributor.institutionauthorAl-Douri, Yaroub
dc.identifier.volume69en_US
dc.identifier.issue6en_US
dc.identifier.startpage1en_US
dc.identifier.endpage15en_US
dc.relation.publicationcategoryMakale - Ulusal - Editör Denetimli Dergien_US


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