Photoluminescence properties of Pr-doped LaAsO4: An experimental and theoretical study employing density functional theory
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info:eu-repo/semantics/embargoedAccessTarih
2024Yazar
Marzougui, BasmaBen Smida, Youssef
Ferhi, Mounir
Ferjani, Hela
Onwudiwe, Damian
Hamzaoui, Ahmed Hichem
Triki, Mohamed
Al-Douri, Yarub
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Marzougui, B., Smida, Y. B., Ferhi, M., Ferjani, H., Onwudiwe, D., Hamzaoui, A. H., ... & Al Douri, Y. (2024). Photoluminescence properties of Pr-doped LaAsO4: An experimental and theoretical study employing density functional theory. Ceramics International.Özet
Praseodymium doped lanthanum arsenate, denoted as La1-xPrxAsO4, has been synthesized with different concentrations of the dopant (x = 0.5 %; 1 %; 2 %; 3 % and 5 %) via the combustion method and their optoelectronic properties have been investigated. A study of the crystalline structure and size of the compound by XRD confirms that both the pristine LaAsO4 and Pr-doped LaAsO4 are pure and maintain a monoclinic crystal structure, with the crystalline size ranging from 60 to 76 nm. The morphological study of the nanoparticles by SEM analysis reveals that all samples, regardless of the concentration of Pr3+, consist of homogeneously packed and irregularly shaped small particles. The optical studies by absorption and fluorescence spectroscopies highlight the unique optoelectronic characteristics of La1-xPrxAsO4, with absorption predominantly in the UV and blue regions and prominent emission peaks in the visible spectrum, most notably at 610 nm. The optimal luminescence is observed at a 0.5 % Pr3+ doping level, deviating from typical trends as higher concentrations lead to diminished emission intensity and lifetime due to concentration quenching effects. The application of Density Functional Theory (DFT) with GGA + PBE and GGA + PBE + U approximations has effectively elucidated the electronic structure and optical properties of the Pr-doped LaAsO4. The incorporation of Pr's 4f states within the LaAsO4 forbidden band significantly alters the material's electronic landscape, notably reducing the optical band gap from 4.45 eV to 2.299 eV. This modification in the band structure aligns favourably with the dielectric function curves and density of states analyses, corroborating the observed visible light emission in the doped samples.