Effects of doping concentrations and position-dependent mass on the nonlinear optical properties of asymmetric double delta-doped GaAs quantum wells

Abstract

This study examines the electronic and optical properties of an asymmetric double delta doped quantum wells structure formed within GaAs. The electronic structure of system is obtained within effective mass and envelope wave function approximations. Optical responses are calculated in the framework of the compact density matrix approach. The roles of distance between wells, varying one well electron concentration, as well as length parameter of position-dependent mass, on the total optical absorption coefficients and the relative refractive index changes are investigated. The findings of this study indicate that prominence of optical coefficients occurs at higher energies for position-dependent mass, compared to constant mass case. Augmented right well electron concentrations lead to blue-shifts on the optical properties not only with constant mass but also with position-dependent mass. However, the increase in the wells’ separation results the absorption peaks to move towards lower energies.