First-principles calculations to investigate electronic, magnetic and half-metallic ferromagnetic properties of full-Heusler Mn2OsSn
Erişim
info:eu-repo/semantics/embargoedAccessTarih
2023Yazar
Belkharroubi, FadilaBourdim, Mokhtar
Maizia, Ahmed
Belmiloud, Nawal
Khelfaoui, Friha
Smahi, Zakaria
Boudia, Keltouma
Benchehima, Miloud
Azzi, Saliha
Ameri, Mohamed
Al-Douri Y.
Odeh, Ali Abu
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Belkharroubi, F., Bourdim, M., Maizia, A., Belmiloud, N., Khelfaoui, F., Smahi, Z., ... & Odeh, A. A. (2023). First-principles calculations to investigate electronic, magnetic and half-metallic ferromagnetic properties of full-Heusler Mn2OsSn. Philosophical Magazine, p. 1-25.Özet
The structural, electrical, magnetic, and elastic characteristics of the Mn2OsSn full-Heusler compound have all been studied using the full potential linearised augmented plane (FP-LAPW) method. The study's exchange and correlation potentials are calculated using the generalised gradient approach (GGA) developed by Burke, Perdew, and Ernzerhof; the GGA with the Tran-Blaha-modified Becke–Johnson approximations; and the GGA with the correlated Hubbard parameter (GGA +U). Our calculations show that the formation energy of the compound is negative for the two-type structure, which means the crystal may persist indefinitely. Our chemical has a convex hull distance at 0 K for cubic regular and inverse-type structures, indicating that it will likely be synthesised via equilibrium processing. The electronic band structures, densities of states, and 100 spin-polarisation at the Fermi level in the typical cubic AlCu2Mn-type structure show Mn2OsSn in its complete Heusler ferromagnetic state has a half-metallic feature with an indirect band gap in the minority spin. Alternatively, in the CuHg2Ti-type ferromagnetic state, with its inverse cubic structure, this material exhibits metallic ferromagnetic behaviour with a polarisation of 96,325. The half metallicity of the AlCu2Mn-type combination is preserved at 1 GPa of hydrostatic pressure. Thus, Mn2OsSn, with the appropriate correction option for the Hubbard-Coulomb parameter U, will be a promising contender for spintronic applications.